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Same model may have multiple batches, images only for reference.
IRFH4251DTRPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFH4251DTRPBF

Part No IRFH4251DTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R / MOSFET 2N-CH 25V 64A/188A PQFN
Datasheet
IRFH4251DTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual), Schottky
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 64A, 188A
Maximum Rds On at Id,Vgs 3.2 mOhm @ 30A, 10V
Gate-Source Threshold Voltage 2.1V @ 35μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1314pF @ 13V
Maximum Power Dissipation 31W, 63W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PQFN (5x6)
Win Source Part Number 135644-IRFH4251DTRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRFH4251D
Introduction Date June 10, 2013
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian IRFH4251DTRPBF CAD Model

Description

The Infineon Technologies IRFH4251DTRPBF is a dual N-channel Schottky FET transistor that is designed to be used in electronic circuits that require high power.

  • Maximum Power Dissipation: 63W
  • Supply and Demand Status: balanced
  • Package: PQFN (5x6)
  • Popularity: High

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31+ $3.2765 $101.5715
48+ $3.1741 $152.3568
66+ $3.0717 $202.7322
85+ $2.9693 $252.3905
113+ $2.6621 $300.8173
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Availability: 23,970 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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