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IRF1010ZSTRLPBF

Part No IRF1010ZSTRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 95nC @ 10V
Max Input Capacitance 2840pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 120663-IRF1010ZSTRLPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1010ZSTRLPBF CAD Model

Description

The Infineon Technologies IRF1010ZSTRLPBF is a medium popularity electronic component with a limited supply and demand status.

  • Type: N-channel MOSFET
  • Power Dissipation: 140W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Category: Discrete semiconductor products
  • Max Rds On at Id,Vgs: 7.5 mOhm @ 75A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.8921 $56.7630
65+ $1.5525 $100.9125
100+ $1.5040 $150.4000
140+ $1.4555 $203.7700
180+ $1.4070 $253.2600
240+ $1.2614 $302.7360
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,440 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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