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IRF1104PBF

Part No IRF1104PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 2900pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 170W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 017410-IRF1104PBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1104PBF CAD Model

Description

The Infineon Technologies IRF1104PBF is a powerful MOSFET transistor designed for use in high power electronic circuits.

  • Power Dissipation (Max): 170W (Tc)
  • Continuous Drain Current: 100A (Tc) @ 25°C
  • Type: N-channel
  • Drain-Source Breakdown Voltage: 40V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Rds On: 9 mOhm @ 60A, 10V
  • Package: TO-220AB
  • Market Availability: Open market
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,900 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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