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IRF1302S

Part No IRF1302S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 174A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 4 mOhm @ 104A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205285-IRF1302S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF1302S CAD Model

Description

The Infineon Technologies IRF1302S is a discrete semiconductor product that belongs to the MOSFET technology.

  • Polarity: N-Channel
  • Power Dissipation (Max): 200W (Tc)
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 205285-IRF1302S
  • Packaging: Tube/rail
  • Mounting: SMD (SMT)
  • Drive Voltage (max Rds On, Min Rds On): 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 174A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 120nC @ 10V
  • Maximum Input Capacitance: 3600pF @ 25V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On at Id,Vgs: 4 mOhm @ 104A, 10V

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