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Same model may have multiple batches, images only for reference.
IRF1404ZSPBF
Same model may have multiple batches, images only for reference.

IRF1404ZSPBF

Part No IRF1404ZSPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 75A D2PAK
Datasheet
IRF1404ZSPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 150nC @ 10V
Max Input Capacitance 4340pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 3.7 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 205290-IRF1404ZSPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF1404ZSPBF CAD Model

Description

The Infineon Technologies 205290-IRF1404ZSPBF MOSFET is a high-performance electronic component designed for use in discrete semiconductor products.

  • Type: N-Channel MOSFET
  • Maximum Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Ideal for: applications such as lighting and multiphase controllers
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Maximum Gate Charge: 150nC @ 10V
  • Maximum Input Capacitance: 4340pF @ 25V
  • Package: D2PAK case
  • Mounting: SMD (SMT) mounting

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