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Same model may have multiple batches, images only for reference.
IRF1405ZLPBF Real Image
Same model may have multiple batches, images only for reference.

IRF1405ZLPBF

Part No IRF1405ZLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A TO-262
Datasheet
IRF1405ZLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 180nC @ 10V
Max Input Capacitance 4780pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 4.9 mOhm @ 75A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 1046410-IRF1405ZLPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF1405ZLPBF CAD Model

Description

The Infineon Technologies IRF1405ZLPBF is a MOSFET technology-based N-channel polarity product designed for discrete semiconductor applications.

  • Power Dissipation: 230W (Tc)
  • Maximum Gate-Source Voltage: ±20V

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