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Same model may have multiple batches, images only for reference.
IRF1503LPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF1503LPBF

Part No IRF1503LPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 75A TO-262
Datasheet
IRF1503LPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 5730pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 3.3 mOhm @ 140A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-262
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 205292-IRF1503LPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF1503LPBF CAD Model

Description

The Infineon Technologies IRF1503LPBF is an N-channel MOSFET in a TO-262 package.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 75A (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 200W (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 200nC @ 10V
  • Maximum Input Capacitance: 5730pF @ 25V
  • Maximum Rds On: 3.3 mOhm @ 140A, 10V
  • Ideal for: use in power management and motor control applications

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