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Same model may have multiple batches, images only for reference.
IRF2204SPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF2204SPBF

Part No IRF2204SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 170A D2PAK
Datasheet
IRF2204SPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 200nC @ 10V
Max Input Capacitance 5890pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 3.6 mOhm @ 130A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017418-IRF2204SPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF2204SPBF CAD Model

Description

The Infineon Technologies IRF2204SPBF is a high-performance N-channel MOSFET used in power management.

  • Maximum Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 170A (Tc) @ 25°C
  • Maximum Rds On: 3.6 mOhm @ 130A, 10V
  • Mounting: SMD (SMT)
  • Package: D2PAK case
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Max Gate Charge: 200nC @ 10V
  • Maximum Input Capacitance: 5890pF @ 25V
  • Application: power management applications
  • Popularity: common-used part with high popularity
  • Supply and Demand Status: limited

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Quantity Unit Price Ext. Price
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105+ $1.1411 $119.8155
160+ $1.1053 $176.8480
220+ $1.0695 $235.2900
280+ $1.0337 $289.4360
375+ $0.9275 $347.8125
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