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Same model may have multiple batches, images only for reference.
IRF2805STRRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF2805STRRPBF

Part No IRF2805STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 135A D2PAK / Trans MOSFET N-CH Si 55V 135A 3-Pin(2+Tab) D2PAK T/R
Datasheet
IRF2805STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 55V
Current - Continuous Drain (Id) @ 25°C 135A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 230nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 5110pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 200W (Tc)
Rds On (Maximum) @ Id, Vgs 4.7 mOhm @ 104A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 777009-IRF2805STRRPBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRF2805S
Introduction Date November 16, 2004
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF2805STRRPBF CAD Model

Description

The IRF2805STRRPBF is a HEXFET transistor from Infineon Technologies.

  • Drain Source Voltage: 55V
  • Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 104A, 10V
  • Vgs(th) (Maximum) @ Id: 4V @ 250μA
  • Power Dissipation (Maximum): 200W (Tc)
  • Gate Charge (Qg) (Maximum) @ Vgs: 230nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 5110pF @ 25V
  • Mounting Type: SMD
  • Operating Temperature: -55°C ~ 175°C (TJ)

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