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IRF3205SPBF

Part No IRF3205SPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 110A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 146nC @ 10V
Max Input Capacitance 3247pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 8 mOhm @ 62A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 015758-IRF3205SPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3205SPBF CAD Model

Description

The Infineon Technologies 015758-IRF3205SPBF is a high-popularity electronic component with limited supply and demand status.

  • Component Type: MOSFET technology component
  • Category: designed for use in discrete semiconductor products
  • Maximum Power Dissipation: 200W (Tc)
  • Drain-Source Breakdown Voltage: 55V
  • Recommendation: not recommended for new designs
  • Operating Temperature: -55°C to 175°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.5221 $60.0415
240+ $0.4885 $117.2400
370+ $0.4716 $174.4920
530+ $0.4379 $232.0870
690+ $0.4211 $290.5590
860+ $0.4043 $347.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 361,820 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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