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Same model may have multiple batches, images only for reference.
IRF3515S
Same model may have multiple batches, images only for reference.

IRF3515S

Part No IRF3515S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 41A D2PAK
Datasheet
IRF3515S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 107nC @ 10V
Max Input Capacitance 2260pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 45 mOhm @ 25A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 131035-IRF3515S
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3515S CAD Model

Description

The IRF3515S is an N-channel MOSFET transistor from Infineon Technologies.

  • Popularity: medium popularity
  • Supply and Demand Status: balanced
  • Maximum Power Dissipation: 200W
  • Drain-Source Breakdown Voltage: 150V
  • Maximum Continuous Drain Current: 41A
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Application: suitable for high-frequency applications, power switching, and DC-DC converters

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,310 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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