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Same model may have multiple batches, images only for reference.
IRF3704ZCS Real Image
Same model may have multiple batches, images only for reference.

IRF3704ZCS

Part No IRF3704ZCS
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 67A D2PAK
Datasheet
IRF3704ZCS Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.55V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1220pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 57W (Tc)
Maximum Rds On at Id,Vgs 7.9 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046452-IRF3704ZCS
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3704ZCS CAD Model

Description

The Infineon Technologies 1046452-IRF3704ZCS is an N-channel MOSFET transistor that is designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 57W (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 67A (Tc)
  • Gate-Source Threshold Voltage: 2.55V @ 250μA
  • Maximum Rds On @ Id, Vgs: 7.9 mOhm @ 21A, 10V
  • Mounting Technology: SMD (SMT)
  • Package: D2PAK
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 1220pF @ 10V
  • Product Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply and Demand Status: Sufficient

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