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Same model may have multiple batches, images only for reference.
IRF3706S Real Image
Same model may have multiple batches, images only for reference.

IRF3706S

Part No IRF3706S
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 77A D2PAK
Datasheet
IRF3706S Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 77A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.8V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2410pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 88W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1046453-IRF3706S
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF3706S CAD Model

Description

The Infineon Technologies IRF3706S MOSFET is a N-channel power transistor with a drain-source breakdown voltage of 20V, continuous drain current of 77A (Tc), and maximum Rds On of 8.5 mOhm @ 15A, 10V.

  • Type: N-channel MOSFET
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 77A (Tc)
  • Rds On (Max): 8.5 mOhm @ 15A, 10V
  • Power Dissipation: 88W (Tc)
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: D2PAK
  • Dimensions: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Voltage (Max): ±12V
  • Gate-Source Threshold Voltage: 2V @ 250μA

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