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Same model may have multiple batches, images only for reference.
IRF3707STRL
Same model may have multiple batches, images only for reference.

IRF3707STRL

Part No IRF3707STRL
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 62A D2PAK
Datasheet
IRF3707STRL Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 19nC @ 4.5V
Max Input Capacitance 1990pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 87W (Tc)
Maximum Rds On at Id,Vgs 12.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 138808-IRF3707STRL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3707STRL CAD Model

Description

The Infineon Technologies IRF3707STRL is a N-channel MOSFET used in power management.

  • Power Dissipation: 87W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 62A (Tc) @ 25°C
  • Maximum Rds On: 12.5 mOhm @ 15A, 10V
  • Mounting: SMD (SMT)
  • Package: D2PAK
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Max Gate Charge: 19nC @ 4.5V
  • Maximum Input Capacitance: 1990pF @ 15V
  • Status: Obsolete (EOL)
  • Popularity: medium
  • Supply and Demand: limited

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