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Same model may have multiple batches, images only for reference.
IRF3710STRRPBF
Same model may have multiple batches, images only for reference.

IRF3710STRRPBF

Part No IRF3710STRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 57A D2PAK
Datasheet
IRF3710STRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 130nC @ 10V
Max Input Capacitance 3130pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 23 mOhm @ 28A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 069280-IRF3710STRRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3710STRRPBF CAD Model

Description

The Infineon Technologies MOSFET is a N-Channel power transistor designed for discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current @ 25°C: 57A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 130nC @ 10V
  • Maximum Rds on @ Id, Vgs: 23 mOhm @ 28A, 10V
  • Power Dissipation: 200W (Tc)
  • Temperature Range: -55℃ to 175℃ (TJ)
  • Drive Voltage (Max Rds On, Min Rds On): 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
80+ $0.6610 $52.8800
165+ $0.6184 $102.0360
255+ $0.5971 $152.2605
365+ $0.5544 $202.3560
470+ $0.5331 $250.5570
590+ $0.5118 $301.9620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,970 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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