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Same model may have multiple batches, images only for reference.
IRF3711 Real Image
Same model may have multiple batches, images only for reference.

IRF3711

Part No IRF3711
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A⑥) | MOSFET N-CH 20V 110A TO-220AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 110A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 44nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2980pF at 10V
Power Dissipation (Maximum) 3.1W, 120W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220AB
Manufacturer Package TO-220-3
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186995-IRF3711
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3711 CAD Model

Description

The IRF3711 is a MOSFET technology device with an N-channel transistor polarity.

  • Package: TO-220AB
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 110A
  • Rds On (Max): 6mOhm @ 15A, 10V
  • Gate-Source Voltage (Max): ±20V
  • Gate-Source Voltage(th) @ Max Id: 3V @ 250μA
  • Gate Charge (Qg) @ Max Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) @ Max Vds: 2980pF @ 10V
  • Status: Obsolete
  • Supply and Demand: Balance
  • Manufacturer: Infineon Technologies

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Quantity Unit Price Ext. Price
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130+ $0.9168 $119.1840
200+ $0.8882 $177.6400
270+ $0.8596 $232.0920
350+ $0.8309 $290.8150
470+ $0.7450 $350.1500
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