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Same model may have multiple batches, images only for reference.
IRF3711PBF
Same model may have multiple batches, images only for reference.

IRF3711PBF

Part No IRF3711PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 110A TO-220AB
Datasheet
IRF3711PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 2980pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.1W (Ta), 120W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 119860-IRF3711PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF3711PBF CAD Model

Description

The Infineon Technologies IRF3711PBF MOSFET is a high-performance N-channel power transistor with a maximum drain-source breakdown voltage of 20V and a maximum continuous drain current of 110A at 25°C.

  • Maximum Drain-Source Breakdown Voltage: 20V
  • Maximum Continuous Drain Current @ 25°C: 110A @ 25°C
  • Maximum Power Dissipation: 3.1W
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5359 $58.9490
265+ $0.4401 $116.6265
410+ $0.4262 $174.7420
565+ $0.4123 $232.9495
725+ $0.3985 $288.9125
975+ $0.3569 $347.9775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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