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Same model may have multiple batches, images only for reference.
IRF3711SPBF Real Image
Same model may have multiple batches, images only for reference.

IRF3711SPBF

Part No IRF3711SPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description HEXFET Power MOSFET | MOSFET N-CH 20V 110A D2PAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 20V
Id - Continuous Drain Current 110A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6mOhm at 15A, 10V
Gate Source Voltage(th) (Maximum) at Id 3V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 44nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2980pF at 10V
Power Dissipation (Maximum) 3.1W, 120W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package D2PAK
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1186996-IRF3711SPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF3711SPBF CAD Model

Description

The Infineon Technologies IRF3711SPBF is a MOSFET transistor designed for discrete semiconductor products.

  • Supply and Demand Status: Limited
  • Status: Obsolete
  • Drive Voltage: 4.5V, 10V
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 110A
  • Maximum Power Dissipation: 3.1W, 120W
  • Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Gate-Source Voltage: ±20V
  • Gate-Source Voltage (th) (Maximum) @ Id: 3V @ 250μA
  • Gate Charge (Qg) (Maximum) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 2980pF @ 10V
  • Manufacturer Pack Quantity: 50

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