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Same model may have multiple batches, images only for reference.
IRF3808STRLPBF
Same model may have multiple batches, images only for reference.

IRF3808STRLPBF

Part No IRF3808STRLPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 106A D2PAK
Datasheet
IRF3808STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 106A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 5310pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 200W (Tc)
Maximum Rds On at Id,Vgs 7 mOhm @ 82A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 017429-IRF3808STRLPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF3808S
Introduction Date July 02, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian IRF3808STRLPBF CAD Model

Description

The IRF3808STRLPBF is an N-channel MOSFET manufactured by Infineon Technologies.

  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current: 106A
  • Maximum Gate-Source Voltage: ±20V
  • On-Resistance: 7 mOhm @ 82A and 10V

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