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IRF40H210

Part No IRF40H210
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 100A 8PQFN  /  N-Channel 40 V 100A (Tc) 125W (Tc) Surface Mount 8-PQFN (5x6)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series HEXFET®, StrongIRFET™
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5406 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-PQFN (5x6)
Package / Case 8-PowerVDFN
Base Product Number IRF40H210
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names IRF40H210TR,IRF40H210DKR,SP001571340,IRF40H210CT,IRF40H210-ND
Standard Package 4,000
Win Source Part Number 975420-IRF40H210
Ultra Librarian 3D Model Ultra Librarian IRF40H210 CAD Model

Description

The Infineon Technologies IRF40H210 is an N-channel MOSFET that comes in an 8-PowerVDFN package.

  • Manufacturer: Infineon Technologies
  • Channel Type: N-channel
  • Package: 8-PowerVDFN
  • Mounting Type: SMD (SMT)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
  • Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
  • Temperature Range: -55°C ~ 150°C (TJ)
  • Status: Obsolete
  • Supply and Demand: Limited

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