The IRF530NSTRPBF is a 100V, 17A N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) from Infineon Technologies. It's designed for a wide range of power switching applications where efficiency and reliability are crucial. This MOSFET utilizes advanced HEXFET® power MOSFET technology, providing fast switching speeds, low on-resistance, and ruggedized device design.

Applications:

• DC-DC converters
• Power inverters
• Motor control
• Solid-state relays
• Lighting ballasts
• High-frequency switching applications

Features:

• 100V drain-source voltage
• 17A continuous drain current
• Low on-resistance (RDS(on)): 0.16 Ohms at VGS = 10V
• Fast switching speed
• Avalanche energy rated
• Lead-free, RoHS compliant
• Available in a TO-263 (D2PAK) package for surface mounting

Benefits:

• Increased system efficiency due to low on-resistance
• Improved power density, allowing for smaller designs
• Enhanced thermal performance for reliable operation
• Simplified design due to ease of use
• Environmentally friendly due to lead-free and RoHS compliance
• Robust performance in demanding applications

Additional Details:

The IRF530NSTRPBF MOSFET features a low gate charge, contributing to its fast switching speed and reduced switching losses. It's designed to withstand high avalanche energy, making it suitable for applications with inductive loads. The TO-263 (D2PAK) package allows for efficient heat dissipation and surface mounting. This MOSFET is commonly used in power supplies, motor drives, and lighting systems where high efficiency and reliability are essential. Its robust design and optimized parameters make it a versatile choice for a wide range of power switching applications. The part follows stringent quality control measures and offers long-term operational reliability.

Technical Specifications:

• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 17A
• On-Resistance (RDS(on)): 0.16 Ohms (at VGS = 10V)
• Gate Threshold Voltage (VGS(th)): 2V to 4V
• Operating Temperature: -55°C to +175°C