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Same model may have multiple batches, images only for reference.
IRF5800TR
Same model may have multiple batches, images only for reference.

IRF5800TR

Part No IRF5800TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 4A 6-TSOP
Datasheet
IRF5800TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 17nC @ 10V
Max Input Capacitance 535pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package Micro6(TSOP-6)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 109722-IRF5800TR
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF5800TR CAD Model

Description

The Infineon Technologies IRF5800TR is a P-Channel MOSFET transistor used in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current (25°C): 4A @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 17nC @ 10V
  • Maximum Input Capacitance: 535pF @ 25V
  • Case/Package: Micro6(TSOP-6) package suitable for surface mount technology
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ROHS Compliant: ROHS

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