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Same model may have multiple batches, images only for reference.
IRF5852TR
Same model may have multiple batches, images only for reference.

IRF5852TR

Part No IRF5852TR
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 2.7A 6-TSOP
Datasheet
IRF5852TR Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.7A
Maximum Rds On at Id,Vgs 90 mOhm @ 2.7A, 4.5V
Gate-Source Threshold Voltage 1.25V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 400pF @ 15V
Maximum Power Dissipation 960mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Win Source Part Number 107122-IRF5852TR
Family Name IRF5852
Introduction Date March 01, 2001
ECCN EAR99
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF5852TR CAD Model

Description

The Infineon Technologies IRF5852TR is a 2 N-Channel (Dual) MOSFET transistor that has a drain-source breakdown voltage of 20V and a continuous drain current of 2.7A at 25°C.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current (25°C): 2.7A @ 25°C
  • Gate-Source Threshold Voltage: 1.25V @ 250μA
  • Maximum Gate Charge: 6nC @ 4.5V
  • Maximum Input Capacitance: 400pF @ 15V
  • Maximum Rds On (Id, Vgs): 90 mOhm @ 2.7A, 4.5V
  • Category: Discrete Semiconductor Products applications
  • Case/Package: 6-TSOP package
  • Mounting Type: SMD (SMT)

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0088 $60.5280
140+ $0.8278 $115.8920
220+ $0.8020 $176.4400
300+ $0.7761 $232.8300
385+ $0.7502 $288.8270
520+ $0.6726 $349.7520
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