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Same model may have multiple batches, images only for reference.
IRF5NJ3315
Same model may have multiple batches, images only for reference.

IRF5NJ3315

Part No IRF5NJ3315
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package SMD/SMT
Continuous Drain Current (ID) 12 A
Current Rating 20 A
Drain to Source Breakdown Voltage 150 V
Gate to Source Voltage (Vgs) 20 V
Lead Free Contains Lead
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 3
On-State Resistance 100 mΩ
Power Dissipation 75 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1189711-IRF5NJ3315
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5NJ3315 CAD Model

Description

The Infineon Technologies IRF5NJ3315 is a single N-channel RF MOSFET transistor that is perfect for various applications.

  • Win Source Part Number: 1189711-IRF5NJ3315
  • Current Rating: 20 A
  • Power Dissipation: 75 W
  • Elements: 1
  • Number of Pins: 3
  • Case/Package: SMD/SMT
  • Popularity: Medium
  • RoHS Compliant: Yes
  • Lead Content: Contains lead
  • Radiation Hardening: No
  • Temperature Range: -55 °C to 150 °C
  • Continuous Drain Current: 12 A
  • Drain to Source Breakdown Voltage: 150 V
  • Gate to Source Voltage: 20 V
  • On-State Resistance: 100 mΩ

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