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Same model may have multiple batches, images only for reference.
IRF5NJ3315SCV
Same model may have multiple batches, images only for reference.

IRF5NJ3315SCV

Part No IRF5NJ3315SCV
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 12 A
Drain to Source Breakdown Voltage 150 V
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 75 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1031658-IRF5NJ3315SCV
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5NJ3315SCV CAD Model

Description

The Infineon Technologies IRF5NJ3315SCV is a P-channel MOSFET transistor that has a drain to source breakdown voltage of 150V and a continuous drain current of 12A.

  • Drain to Source Breakdown Voltage: 150V
  • Continuous Drain Current: 12A
  • On-State Resistance: 100mΩ
  • Power Dissipation: Up to 75W
  • Operating Temperature: -55°C to 150°C

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