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Same model may have multiple batches, images only for reference.
IRF5NJ540SCV
Same model may have multiple batches, images only for reference.

IRF5NJ540SCV

Part No IRF5NJ540SCV
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 16 A
Drain to Source Breakdown Voltage 100 V
Fall Time 82 ns
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 75 W
Radiation Hardening No
Rise Time 125 ns
RoHS Compliant
Turn-Off Delay Time 86 ns
Turn-On Delay Time 24 ns
Win Source Part Number 1019406-IRF5NJ540SCV
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IRF5NJ540SCV CAD Model

Description

The IRF5NJ540SCV is a single N-channel power MOSFET transistor with a surface mount device (SMD) package, manufactured by Infineon Technologies.

  • Application: Radio Frequency (RF)
  • Maximum Operating Temperature: 150 °C
  • Continuous Drain Current (ID): 16 A
  • Drain to Source Breakdown Voltage: 100 V
  • On-State Resistance: 100 mΩ
  • Turn-On Delay Time: 24 ns
  • Turn-Off Delay Time: 86 ns
  • Voltage Supply: 75 W
  • Rise Time: 125 ns
  • Fall Time: 82 ns
  • Package: Bulk
  • Standard Package: 3
  • ECCN: EAR99
  • RoHS Compliant: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $198.0000 $198.0000
2+ $191.4001 $382.8002
3+ $171.6000 $514.8000
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Availability: 7 pieces
Order Increment : 1 pcs
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