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Same model may have multiple batches, images only for reference.
IRF5Y5305CMSCV
Same model may have multiple batches, images only for reference.

IRF5Y5305CMSCV

Part No IRF5Y5305CMSCV
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) -15 A
Drain to Source Breakdown Voltage -55 V
Gate to Source Voltage (Vgs) 20 V
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Pins 3
On-State Resistance 100 mΩ
Packaging Bulk
Power Dissipation 75 W
Radiation Hardening No
RoHS Compliant
Win Source Part Number 1222288-IRF5Y5305CMSCV
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF5Y5305CMSCV CAD Model

Description

The IRF5Y5305CMSCV is an RF MOSFET transistor from Infineon Technologies.

  • Continuous Drain Current (ID): -15 A
  • Drain to Source Breakdown Voltage: -55 V
  • On-State Resistance: 100 mΩ
  • Power Dissipation: 75 W
  • Package: Through-hole mount package with three pins
  • Designed for: Discrete semiconductor products like transistors, FETs, and MOSFETs

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