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IRF60SC241ARMA1

Part No IRF60SC241ARMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 360A TO263-7  /  N-Channel 60 V 360A (Tc) 2.4W (Ta), 417W (Tc) Surface Mount PG-TO263-7
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series StrongIRFET™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 360A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 388 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 16000 pF @ 30 V
Power Dissipation (Max) 2.4W (Ta), 417W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Base Product Number IRF60SC241
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 448-IRF60SC241ARMA1DKR,448-IRF60SC241ARMA1CT,448-IRF60SC241ARMA1TR,SP001646066
Standard Package 800
Win Source Part Number 1210003-IRF60SC241ARMA1
Ultra Librarian 3D Model Ultra Librarian IRF60SC241ARMA1 CAD Model

Description

The Infineon Technologies 1210003-IRF60SC241ARMA1 is a high-performance MOSFET transistor that operates with N-channel FET type.

  • Series: StrongIRFET™
  • Packaging: Tape and reel
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 360A @ 25°C
  • Rds On (Max) @ Id, Vgs: 1.3mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 250μA
  • Temperature Range: -55°C to 175°C (TJ)
  • Power Dissipation: 2.4W (Ta), 417W (Tc)

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