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IRF630NSPBF

Name: IRF630NSPBF
Brand: Infineon Technologies
SKU: 604414
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IRF630NSPBF
Manufacturer	Infineon Technologies
Catalog	FETs - Single
Description	HEXFET Power MOSFET \| MOSFET N-CH 200V 9.3A D2PAK
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Tube
Transistor Polarity	N-Channel
Technology	MOSFET
Vds - Drain-Source Breakdown Voltage	200V
Id - Continuous Drain Current	9.3A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Maximum) at Id, Vgs	300mOhm at 5.4A, 10V
Gate Source Voltage(th) (Maximum) at Id	4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs	35nC at 10V
Gate Source Voltage (Maximum)	±20V
Input Capacitance (Ciss) (Maximum) at Vds	575pF at 25V
Power Dissipation (Maximum)	82W
Temperature Range - Operating	-55°C ~ 175°C
Mounting Style	SMD
Supplier Device Package	D2PAK
Manufacturer Package	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity	50
MSL Level	1 (Unlimited)
Win Source Part Number	1187102-IRF630NSPBF
Manufacturer Homepage	www.irf.com
Popularity	Medium
Supply and Demand Status	Limited
Ultra Librarian 3D Model	Ultra Librarian IRF630NSPBF CAD Model

Alternative Products

Description

The Infineon Technologies IRF630NSPBF is a MOSFET with an N-channel transistor polarity and a maximum power dissipation of 82W.

Vds - Drain-Source Breakdown Voltage: 200V
Continuous Drain Current: 9.3A
Mounting Style: SMD
Package: D2PAK
Maximum Rds On @ Id,Vgs: 300mOhm @ 5.4A, 10V
Product Category: Discrete Semiconductor Products
Popularity: Medium
Supply and Demand Status: Limited

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
105+	$0.4856	$50.9880
220+	$0.4549	$100.0780
345+	$0.4395	$151.6275
490+	$0.4088	$200.3120
640+	$0.3934	$251.7760
795+	$0.3781	$300.5895

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 14,450 pieces

MOQ: 105 pcs

Order Increment : 1 pcs

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