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Same model may have multiple batches, images only for reference.
IRF640NSTRRPBF
Same model may have multiple batches, images only for reference.

IRF640NSTRRPBF

Part No IRF640NSTRRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 18A D2PAK
Datasheet
IRF640NSTRRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 67nC @ 10V
Max Input Capacitance 1160pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 11A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 015764-IRF640NSTRRPBF
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian IRF640NSTRRPBF CAD Model

Description

The Infineon Technologies 015764-IRF640NSTRRPBF is a MOSFET technology-based electronic component.

  • Supply and Demand Status: Sufficient
  • Polarity: N-Channel
  • Application: Power management
  • Maximum Power Dissipation: 150W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3603 $50.4420
340+ $0.2957 $100.5380
525+ $0.2864 $150.3600
725+ $0.2772 $200.9700
935+ $0.2680 $250.5800
1,250+ $0.2402 $300.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 40,020 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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