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IRF6608TR1

Part No IRF6608TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A DIRECTFET
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 24nC @ 4.5V
Max Input Capacitance 2120pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 2.1W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 13A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 091748-IRF6608TR1
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRF6608TR1 CAD Model

Description

The Infineon Technologies IRF6608TR1 is an N-Channel polarity MOSFET transistor that has a maximum power dissipation of 2.1W (Ta) and 42W (Tc) and a drain-source breakdown voltage of 30V.

  • Package: DIRECTFET ST case
  • Mounting: SMD (SMT)
  • Drive Voltage: 4.5V and 10V
  • Maximum Rds On: 9 mOhm at 13A and 10V
  • Popularity: High
  • Supply and Demand Status: balance
  • Quantity per Package: 1k pcs

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $1.0787 $59.3285
135+ $0.8851 $119.4885
205+ $0.8575 $175.7875
280+ $0.8298 $232.3440
360+ $0.8022 $288.7920
485+ $0.7191 $348.7635
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,600 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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