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Same model may have multiple batches, images only for reference.
IRF6614TR1PBF Real Image
Same model may have multiple batches, images only for reference.

IRF6614TR1PBF

Part No IRF6614TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 12.7A DIRECTFET / Trans MOSFET N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R
Datasheet
IRF6614TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series HEXFET
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 12.7A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.25V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 29nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 2560pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.1W (Ta), 42W (Tc)
Rds On (Maximum) @ Id, Vgs 8.3 mOhm @ 12.7A, 10V
Operating Temperature Range -40°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package DIRECTFET ST
Package DirectFET Isometric ST
Win Source Part Number 777018-IRF6614TR1PBF
Popularity Medium
Supply and Demand Status Limited
Family Name IRF6614
Introduction Date May 05, 2006
ECCN EAR99
Country of Origin Mexico
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian IRF6614TR1PBF CAD Model

Description

The Infineon Technologies IRF6614TR1PBF is a HEXFET MOSFET transistor.

  • Power Dissipation: 2.1W (Ta), 42W (Tc)
  • Drain-source breakdown voltage: 40V
  • Continuous Drain Current @ 25°C: 12.7A (Ta), 55A (Tc)
  • Rds On @ Id, Vgs: 8.3 mOhm @ 12.7A, 10V
  • Gate-source threshold voltage: 2.25V @ 250μA
  • Gate Charge: 29nC @ 4.5V
  • Input Capacitance: 2560pF @ 20V
  • Gate-source voltage: ±20V
  • Package: DirectFET Isometric ST
  • Status: Obsolete (EOL)
  • Supply: Limited

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32+ $9.6572 $309.0304
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