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Same model may have multiple batches, images only for reference.
IRF6623TR1
Same model may have multiple batches, images only for reference.

IRF6623TR1

Part No IRF6623TR1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 16A DIRECTFET
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1360pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 108062-IRF6623TR1
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian IRF6623TR1 CAD Model

Description

The Infineon Technologies IRF6623TR1 is an N-Channel MOSFET discrete semiconductor product that is suitable for power management applications.

  • Lifecycle Status: This product is obsolete and end-of-life, meaning it is no longer being manufactured.
  • Manufacturer: Infineon Technologies
  • Win Source Part Number: 108062
  • Product Category: Discrete Semiconductor Products
  • Power Dissipation: 1.4W at Ta and 42W at Tc
  • Maximum Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 16A at Ta and 55A at Tc.

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9475 $58.4250
75+ $1.5980 $119.8500
115+ $1.5481 $178.0315
155+ $1.4980 $232.1900
200+ $1.4481 $289.6200
270+ $1.2984 $350.5680
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Availability: 18,900 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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