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Same model may have multiple batches, images only for reference.
IRF6623TR1PBF
Same model may have multiple batches, images only for reference.

IRF6623TR1PBF

Part No IRF6623TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 16A DIRECTFET
Datasheet
IRF6623TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 16A (Ta), 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 17nC @ 4.5V
Max Input Capacitance 1360pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 5.7 mOhm @ 15A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET ST
Dimension DirectFET Isometric ST
Win Source Part Number 131196-IRF6623TR1PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6623TR1PBF CAD Model

Description

The IRF6623TR1PBF from Infineon Technologies is an N-channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 16A (Ta), 55A (Tc) @ 25 degrees Celsius.

  • Maximum Rds on at Id, Vgs: 5.7 mOhm @ 15A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Power Dissipation: 1.4W (Ta), 42W (Tc)
  • Operating Temperature Range: -40 to 150 degrees Celsius
  • Package: DIRECTFET ST case/package
  • Dimension: DirectFET Isometric ST dimension
  • Supply and demand status: Limited.

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50+ $2.3100 $115.5000
78+ $2.2384 $174.5952
107+ $2.1656 $231.7192
138+ $2.0940 $288.9720
185+ $1.8769 $347.2265
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