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Same model may have multiple batches, images only for reference.
IRF6631TR1PBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRF6631TR1PBF

Part No IRF6631TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A DIRECTFET
Datasheet
IRF6631TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta), 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.35V @ 25μA
Max Gate Charge 18nC @ 4.5V
Max Input Capacitance 1450pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 7.8 mOhm @ 13A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SQ
Dimension DirectFET Isometric SQ
Win Source Part Number 124517-IRF6631TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6631TR1PBF CAD Model

Description

The Infineon Technologies MOSFET is a high-performance N-channel transistor designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 13A (Ta), 57A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.35V @ 25μA
  • Maximum Gate Charge: 18nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 7.8 mOhm @ 13A, 10V
  • Part Status: Obsolete (EOL)
  • Temperature Range: -40°C to 150°C (TJ)
  • Package: DIRECTFET SQ package.

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Quantity Unit Price Ext. Price
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90+ $1.3248 $119.2320
140+ $1.2832 $179.6480
190+ $1.2416 $235.9040
245+ $1.2012 $294.2940
325+ $1.0765 $349.8625
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