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IRF6665TR1PBF
Same model may have multiple batches, images only for reference.

IRF6665TR1PBF

Part No IRF6665TR1PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.2A DIRECTFET
Datasheet
IRF6665TR1PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 62 mOhm @ 5A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SH
Dimension DirectFET Isometric SH
Win Source Part Number 123001-IRF6665TR1PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6665TR1PBF CAD Model

Description

The Infineon Technologies IRF6665TR1PBF is a N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 4.2A @ 25°C.

  • Maximum Rds On @ Id,Vgs: 62 mOhm @ 5A, 10V
  • Maximum Power Dissipation: 2.2W (Ta), 42W (Tc)
  • Temperature Range: -40°C to 150°C (TJ)
  • Package: packaged in a DirectFET SH
  • Mounting: mounted as SMD (SMT) technology
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1275 $57.7850
30+ $3.8613 $115.8390
46+ $3.7281 $171.4926
65+ $3.4618 $225.0170
85+ $3.3288 $282.9480
106+ $3.1956 $338.7336
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Availability: 8,910 pieces
MOQ: 14 pcs
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