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Same model may have multiple batches, images only for reference.
IRF6665TRPBF
Same model may have multiple batches, images only for reference.

IRF6665TRPBF

Part No IRF6665TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 4.2A DIRECTFET / Trans MOSFET N-CH Si 100V 4.2A 6-Pin Direct-FET SH T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 4.2A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
Maximum Rds On at Id,Vgs 62 mOhm @ 5A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET SH
Dimension DirectFET Isometric SH
Win Source Part Number 069326-IRF6665TRPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IRF6665
Introduction Date August 25, 2006
ECCN EAR99
Country of Origin China, Mexico
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian IRF6665TRPBF CAD Model

Description

The Infineon Technologies IRF6665TRPBF is an N-Channel polarity MOSFET transistor that belongs to the IRF6665 family.

  • Package: packaged in a DIRECTFET SH case
  • Mounting: mounting option of SMD (SMT)
  • Maximum Power Dissipation: 2.2W (Ta) and 42W (Tc)
  • Drain-Source Breakdown Voltage: 100V
  • Drive Voltage: 10V
  • Maximum Rds On: 62 mOhm @ 5A and 10V
  • Popularity: commonly used and has a high popularity
  • Supply and Demand Status: balance
  • Compliance: halogen-free compliant
  • Estimated EOL Date: 2027

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