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IRF6674TRPBF

Part No IRF6674TRPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Benchmark MOSFETs Product Selection Guide | MOSFET N-CH 60V 13.4A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 60V
Id - Continuous Drain Current 13.4A, 67A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 11mOhm at 13.4A, 10V
Gate Source Voltage(th) (Maximum) at Id 4.9V at 100μA
Gate Charge (Qg) (Maximum) at Vgs 36nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1350pF at 25V
Power Dissipation (Maximum) 3.6W, 89W
Temperature Range - Operating -40°C ~ 150°C
Mounting Style SMD
Supplier Device Package DIRECTFET MZ
Manufacturer Package DirectFET Isometric MZ
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 753731-IRF6674TRPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6674TRPBF CAD Model

Description

The Infineon Technologies IRF6674TRPBF is a N-Channel MOSFET that is designed for use in power switching applications.

  • Package: housed in a DirectFET MZ package
  • Maximum Power Dissipation: 3.6W, 89W.
  • Supply and demand status: limited, making it a valuable component for power switching applications.

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