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Same model may have multiple batches, images only for reference.
IRF6678TRPBF
Same model may have multiple batches, images only for reference.

IRF6678TRPBF

Part No IRF6678TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A DIRECTFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.25V @ 250μA
Max Gate Charge 65nC @ 4.5V
Max Input Capacitance 5640pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 30A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 143339-IRF6678TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6678TRPBF CAD Model

Description

The Infineon Technologies 143339-IRF6678TRPBF is a N-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 30A (Ta), 150A (Tc).

  • Maximum Rds On @ Id,Vgs: 2.2 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 2.25V @ 250μA
  • Maximum Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Technology: MOSFET
  • Package: packaged in a reel-TR
  • Mounting: mounted in SMD (SMT) technology
  • Suitability: ideal for use in discrete semiconductor products
  • Popularity: medium
  • Supply and Demand Status: balance

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Quantity Unit Price Ext. Price
80+ $0.7404 $59.2320
195+ $0.6075 $118.4625
295+ $0.5879 $173.4305
410+ $0.5694 $233.4540
525+ $0.5509 $289.2225
705+ $0.4932 $347.7060
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Availability: 2,120 pieces
MOQ: 80 pcs
Order Increment : 1 pcs
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