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IRF6706S2TR1PBF

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Part No	IRF6706S2TR1PBF
Manufacturer	Infineon Technologies
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 25V 17A DIRECTFET / N-Channel 25 V 17A (Ta), 63A (Tc) 1.8W (Ta), 26W (Tc) Surface Mount DirectFET™ Isometric S1
Datasheet	IRF6706S2TR1PBF Datasheet
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tape & Reel
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	25 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	20 nC @ 4.5 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1810 pF @ 13 V
Power Dissipation (Max)	1.8W (Ta), 26W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting	SMD (SMT)
Supplier Device Package	DirectFET™ Isometric S1
Package / Case	DirectFET™ Isometric S1
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	IRF6706S2TR1PBFCT,IRF6706S2TR1PBFTR,SP001528294,IRF6706S2TR1PBFDKR
Standard Package	1,000
Win Source Part Number	1023292-IRF6706S2TR1PBF
Ultra Librarian 3D Model	Ultra Librarian IRF6706S2TR1PBF CAD Model

Alternative Products

Description

The Infineon Technologies 1023292-IRF6706S2TR1PBF is a N-Channel MOSFET transistor with a drain to source voltage (Vdss) of 25 V and a power dissipation of 1.8 W (Ta), 26 W (Tc).

Drain to Source Voltage (Vdss): 25 V
Power Dissipation: 1.8 W (Ta), 26 W (Tc)
Continuous Drain Current (ID): 17A (Ta), 63A (Tc)
On-State Resistance: 3.8mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 13 V
Suitable Applications: Transistors - FETs, MOSFETs - Single
Status: Obsolete

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