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Same model may have multiple batches, images only for reference.
IRF6709S2TRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF6709S2TRPBF

Part No IRF6709S2TRPBF
Manufacturer Infineon Technologies
Catalog FETs - Single
Description Benchmark MOSFETs Product Selection Guide | MOSFET N-CH 25V 12A DIRECTFET-S1
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tape and Reel
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 25V
Id - Continuous Drain Current 12A, 39A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 7.8mOhm at 12A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.35V at 25μA
Gate Charge (Qg) (Maximum) at Vgs 12nC at 4.5V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1010pF at 13V
Power Dissipation (Maximum) 1.8W, 21W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package DIRECTFET S1
Manufacturer Package DirectFET Isometric S1
Manufacturer Pack Quantity 4,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187156-IRF6709S2TRPBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF6709S2TRPBF CAD Model

Description

The Infineon Technologies IRF6709S2TRPBF is an N-channel MOSFET transistor with a breakdown voltage of 25V.

  • Continuous Drain Current: 12A and 39A
  • Maximum Rds On: 7.8mOhm @ 12A and 10V
  • Gate Charge (Qg): 12nC @ 4.5V
  • Input Capacitance (Ciss): 1010pF @ 13V
  • Status: Obsolete
  • Supply and Demand Status: Limited

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290+ $0.4019 $116.5510
450+ $0.3892 $175.1400
615+ $0.3777 $232.2855
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1,065+ $0.3269 $348.1485
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