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Same model may have multiple batches, images only for reference.
IRF6714MTRPBF
Same model may have multiple batches, images only for reference.

IRF6714MTRPBF

Part No IRF6714MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 29A DIRECTFET
Datasheet
IRF6714MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 29A (Ta), 166A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.4V @ 100μA
Max Gate Charge 44nC @ 4.5V
Max Input Capacitance 3890pF @ 13V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 2.1 mOhm @ 29A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MX
Dimension DirectFET Isometric MX
Win Source Part Number 069332-IRF6714MTRPBF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRF6714MTRPBF CAD Model

Description

The IRF6714MTRPBF from Infineon Technologies is an N-Channel MOSFET that comes in a DIRECTFET MX case/package.

  • Product Type: Discrete Semiconductor Product
  • Maximum Power Dissipation: 2.8W (Ta), 89W (Tc)
  • Drain-Source Breakdown Voltage: 25V
  • Temperature Range: -40°C to 150°C (TJ)
  • Continuous Drain Current: 29A (Ta), 166A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 2.4V @ 100μA
  • Maximum Rds On at Id, Vgs: 2.1 mOhm @ 29A, 10V
  • Product Status: active
  • Popularity: medium
  • Supply and Demand Status: sufficient

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Quantity Unit Price Ext. Price
75+ $0.7075 $53.0625
155+ $0.6627 $102.7185
235+ $0.6403 $150.4705
340+ $0.5956 $202.5040
440+ $0.5732 $252.2080
545+ $0.5508 $300.1860
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Availability: 124,170 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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