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Same model may have multiple batches, images only for reference.
IRF6775MTRPBF Real Image
Same model may have multiple batches, images only for reference.

IRF6775MTRPBF

Part No IRF6775MTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 4.9A DIRECTFET
Datasheet
IRF6775MTRPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 4.9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 100μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 1411pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
Maximum Rds On at Id,Vgs 56 mOhm @ 5.6A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DIRECTFET MZ
Dimension DirectFET Isometric MZ
Win Source Part Number 1046568-IRF6775MTRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF6775MTRPBF CAD Model

Description

The Infineon Technologies IRF6775MTRPBF is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Mounting Technology: SMD (SMT)
  • Package: DirectFET MZ
  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 4.9A (Ta), 28A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 100μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Input Capacitance: 1411pF @ 25V
  • Maximum Rds On: 56 mOhm @ 5.6A, 10V
  • Operating Temperature Range: -40°C to 150°C (TJ)

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Quantity Unit Price Ext. Price
40+ $1.4150 $56.6000
80+ $1.3254 $106.0320
120+ $1.2806 $153.6720
170+ $1.1911 $202.4870
220+ $1.1463 $252.1860
275+ $1.1015 $302.9125
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