The Infineon Technologies 433407 is a MOSFET semiconductor product in the N-channel polarity designed for use in discrete semiconductor applications.

• Maximum Power Dissipation: 2W
• Continuous Drain Current: 3.5A @ 25°C
• Drain-Source Breakdown Voltage: 20V
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Gate Charge: 15nC @ 10V
• Maximum Input Capacitance: 320pF @ 15V
• Maximum Rds On: 100 mOhm @ 1.8A and 10V
• Package: 8-SO case
• Application: suitable for use in applications that require a logic level gate, such as in the computer industry.