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Same model may have multiple batches, images only for reference.
IRF7301PBF
Same model may have multiple batches, images only for reference.

IRF7301PBF

Part No IRF7301PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 5.2A 8-SOIC
Datasheet
IRF7301PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.2A
Maximum Rds On at Id,Vgs 50 mOhm @ 2.6A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 660pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 132151-IRF7301PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7301PBF CAD Model

Description

The Infineon Technologies 132151-IRF7301PBF is a dual N-channel logic level gate FET. It is a surface-mount device that is not for new designs.

  • Supply and Demand Status: Limited
  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5.2A @ 25°C
  • Maximum Gate Charge: 20nC @ 4.5V
  • Maximum Input Capacitance: 660pF @ 15V
  • Maximum Rds On at Id, Vgs: 50 mOhm @ 2.6A, 4.5V

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