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Same model may have multiple batches, images only for reference.
IRF7314PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7314PBF

Part No IRF7314PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 5.3A 8-SOIC
Datasheet
IRF7314PBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A
Maximum Rds On at Id,Vgs 58 mOhm @ 2.9A, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 29nC @ 4.5V
Max Input Capacitance 780pF @ 15V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046598-IRF7314PBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7314PBF CAD Model

Description

The Infineon Technologies 1046598-IRF7314PBF is a 2 P-Channel (Dual) FET transistor with a logic level gate.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 58 mOhm @ 2.9A, 4.5V
  • Design Status: Not for new designs
  • Supply and Demand Status: Balance
  • Temperature Range: -55°C to 150°C (TJ)

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