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IRF7316QTRPBF

Part No IRF7316QTRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 4.9A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 4.9A
Maximum Rds On at Id,Vgs 58 mOhm @ 4.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 34nC @ 10V
Max Input Capacitance 710pF @ 25V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1046602-IRF7316QTRPBF
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian IRF7316QTRPBF CAD Model

Description

The Infineon Technologies IRF7316QTRPBF is a dual P-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 4.9A at 25°C.

  • Manufacturer: Infineon Technologies
  • Channel Type: Dual P-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 4.9A
  • Power Dissipation: 2W
  • Rds On (Max) @ 4.9A and 10V: 58 mOhm
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Gate Charge (Max): 34nC @ 10V
  • Input Capacitance (Max): 710pF @ 25V
  • Mounting Type: SMD (SMT)
  • Package: 8-SO
  • Product Status: Obsolete (EOL)
  • Application: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7752 $62.1320
80+ $1.4565 $116.5200
125+ $1.4114 $176.4250
170+ $1.3652 $232.0840
220+ $1.3202 $290.4440
295+ $1.1839 $349.2505
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,830 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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