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Same model may have multiple batches, images only for reference.
IRF7324D1TRPBF
Same model may have multiple batches, images only for reference.

IRF7324D1TRPBF

Part No IRF7324D1TRPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.2A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA
Max Gate Charge 7.8nC @ 4.5V
Max Input Capacitance 260pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 270 mOhm @ 1.2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 100064-IRF7324D1TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRF7324D1TRPBF CAD Model

Description

The Infineon Technologies 100064-IRF7324D1TRPBF is a medium-popularity electronic component that is a MOSFET with a Schottky diode (isolated) feature.

  • Polarity: P-channel
  • Power Dissipation: 2W (Ta)
  • Commonly used in: discrete semiconductor products
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4712 $58.9000
300+ $0.3866 $115.9800
465+ $0.3746 $174.1890
640+ $0.3624 $231.9360
825+ $0.3504 $289.0800
1,105+ $0.3142 $347.1910
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,780 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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