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Same model may have multiple batches, images only for reference.
IRF7328PBF Real Image
Same model may have multiple batches, images only for reference.

IRF7328PBF

Part No IRF7328PBF
Manufacturer Infineon Technologies
Catalog FETs - Arrays
Description HEXFET® Power MOSFET | MOSFET 2P-CH 30V 8A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube
Transistor Polarity 2 P-Channel (Dual)
FET Feature Logic Level Gate
Vds - Drain-Source Breakdown Voltage 30V
Id - Continuous Drain Current 8A
Rds On (Maximum) at Id, Vgs 21mOhm at 8A, 10V
Gate Source Voltage(th) (Maximum) at Id 2.5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 78nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds 2675pF at 25V
Maximum Power 2W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package 8-SOIC
Supplier Device Package 8-SO
Family Part Number IRF7328PBF
Manufacturer Pack Quantity 3,800
MSL Level 1 (Unlimited)
Win Source Part Number 1187219-IRF7328PBF
Manufacturer Homepage www.irf.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7328PBF CAD Model

Description

The Infineon Technologies IRF7328PBF is a P-Channel Dual MOSFET with a drain-source breakdown voltage of 30V and continuous drain current of 8A.

  • Channel Type: P-Channel Dual
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 8A
  • Gate Type: Logic Level
  • Power Dissipation: 2W
  • Package: 8-SOIC
  • Input Capacitance: 2675pF @ 25V
  • Gate-Source Voltage Threshold: 2.5V @ 250μA
  • Gate Charge: 78nC @ 10V
  • Manufacturer: Infineon Technologies

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205+ $0.7361 $150.9005
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475+ $0.6331 $300.7225
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