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IRF7331PBF

Part No IRF7331PBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 7A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 30 mOhm @ 7A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 1340pF @ 16V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 017508-IRF7331PBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF7331PBF CAD Model

Description

The Infineon Technologies IRF7331PBF is a dual N-channel MOSFET transistor that features a logic-level gate and has a drain-source breakdown voltage of 20V.

  • Maximum Continuous Drain Current: 7A @ 25°C
  • Maximum Power Dissipation: 2W
  • Package Type: 8-SO
  • Operating Temperature: -55°C to 150°C
  • Gate-Source Threshold Voltage: 1.2V @ 250μA
  • Max Gate Charge: 20nC @ 4.5V
  • Max Input Capacitance: 1340pF @ 16V
  • Maximum Rds On at Id,Vgs: 30 mOhm @ 7A, 4.5V
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2405 $62.0250
115+ $1.0187 $117.1505
180+ $0.9864 $177.5520
245+ $0.9552 $234.0240
315+ $0.9228 $290.6820
420+ $0.8270 $347.3400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 46,233 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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